FDS6898AZ |
RFQ for FDS6898AZ Required Field |
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| Technical/Catalog Information | FDS6898AZ |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 9.4A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 9.4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1821pF @ 10V |
| Power - Max | 900mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6898AZ FDS6898AZ FDS6898AZTR ND FDS6898AZTRND FDS6898AZTR |
| Product | Manufacturers | Pack | D/C |
| FDS6898AZ | - | SOIC-8 | 05+ |
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features |
| 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V RDS(ON) = 18 m @ VGS = 2.5 V Low gate charge (16 nC typical) ESD protection diode High performance trench technology for extremely low RDS(ON) High power and current handling capability |
| Symbol | Parameter |
Ratings |
Units |
| VDSS | Drain-Source Voltage |
20 |
V |
| VGSS | Gate-Source Voltage |
±12 |
V |
| ID |
Drain Current Continuous (Note 1a) |
9.4 |
A |
| Pulsed |
38 | ||
| PD | Power Dissipation for Dual Operation |
2 |
W |
| Power Dissipation for Single Operation (Note 1a) |
1.6 | ||
| (Note 1b) |
1 | ||
| (Note 1c) |
0.9 | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
